61213 tkim tc-00002924/90810qb tk im tc-00002470 no. a1830-1/6 http://onsemi.com semiconductor components industries, llc, 2013 june, 2013 BFL4036 n-channel power mosfet 500v, 14a, 0.52 , to-220f-3fs features ? on-resistance r ds (on)=0.4 (typ.) ? input capacitance ciss=1000pf (typ.) ? 10v drive speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit drain to source voltage v dss 500 v gate to source voltage v gss 30 v drain current (dc) i dc *1 limited only by maximum temperature tch=150 c 14 a i dpack *2 tc=25 c (our ideal heat dissipation condition)*3 9.6 a drain current (pulse) i dp pw 10 s, duty cycle 1% 50 a allowable power dissipation p d 2.0 w tc=25 c (our ideal heat dissipation condition)*3 37 w channel temperature tch 150 c storage temperature tstg --55 to +150 c avalanche energy (single pulse) *4 e as 109 mj avalanche current *5 i av 14 a note : * 1 shows chip capability * 2 package limited * 3 our condition is radiation from backside. the method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. * 4 v dd =50v, l=1mh, i av =14a (fig.1) * 5 l 1mh, single pulse package dimensions unit : mm (typ) 7528-001 ordering number : ena1830a ordering & package information device package shipping memo BFL4036-1e to-220f-3fs sc-67 50 pcs./tube pb-free marking electrical connection fl4036 lot no. 1 3 2 1 : gate 2 : drain 3 : source to-220f-3fs 10.16 0.8 15.87 12.98 3.3 6.68 3.23 1.47 max 15.8 4.7 2.54 2.76 123 0.5 2.54 2.54 3.18 BFL4036-1e stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliabili ty.
BFL4036 no. a1830-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max drain to source breakdown voltage v (br)dss i d =10ma, v gs =0v 500 v zero-gate voltage drain current i dss v ds = 400 v, v gs =0v 100 a gate to source leakage current i gss v gs =24v, v ds =0v 10 a cutoff voltage v gs (off) v ds =10v, i d =1ma 35v forward transfer admittance | yfs | v ds =10v, i d = 7 a 3.5 7 s static drain to source on-state resistance r ds (on) i d = 7 a, v gs =10v 0.4 0.52 input capacitance ciss v ds =30v, f=1mhz 1000 pf output capacitance coss 200 pf reverse transfer capacitance crss 44 pf turn-on delay time t d (on) see fig.2 22 ns rise time t r 66 ns turn-off delay time t d (off) 117 ns fall time t f 46 ns total gate charge qg v ds =200v, v gs =10v, i d =14a 38.4 nc gate to source charge qgs 6.7 nc gate to drain ?miller? charge qgd 22.1 nc diode forward voltage v sd i s =14a, v gs =0v 0.95 1.3 v reverse recovery time t rr see fig.3 i s =14a, v gs =0v, di/dt=100a/ s 520 ns reverse recovery charge qrr 4200 nc fig.1 unclamped inductive switching test circuit fig.2 switching time test circuit fig.3 reverse recovery time test circuit 50 10v 0v 50 rg v dd l BFL4036 g s d pw=10 s d.c. 1% p. g 50 g s d i d =7a r l =28.2 v dd =200v v out BFL4036 v in 10v 0v v in v dd =50v BFL4036 500 h driver mosfet g s d
BFL4036 no. a1830-3/6 drain to source voltage, v ds -- v drain current, i d -- a gate to source voltage, v gs -- v drain current, i d -- a static drain to source on-state resistance, r ds (on) -- static drain to source on-state resistance, r ds (on) -- case temperature, tc -- c drain current, i d -- a forward transfer admittance, | y fs | -- s diode forward voltage, v sd -- v source current, i s -- a gate to source voltage, v gs -- v i d -- v ds i d -- v gs r ds (on) -- v gs r ds (on) -- tc i s -- v sd | y fs | -- i d drain current, i d -- a switching time, sw time -- ns sw time -- i d drain to source voltage, v ds -- v ciss, coss, crss -- pf ciss, coss, crss -- v ds it11720 it11721 it11722 it11723 --50 --25 0 25 50 75 100 125 150 0 0 40 30 35 25 20 15 10 30 525 15 20 10 5 0 40 30 35 25 20 15 10 5 020 18 16 412 210 68 14 15v 10v 0 1.2 1.0 0.4 0.8 0.6 0.2 tc=25 c v ds =20v v gs =5v 6v it11725 0.2 0.4 0.6 0.8 1.4 1.2 1.0 0.01 0.1 10 7 5 3 2 5 3 2 7 5 3 2 2 1.0 7 5 3 it11724 25 c --25 c tc=75 c 0.1 23 57 23 1.0 23 57 10 1.00e+00 1.00e+01 2 3 5 7 5 7 3 2 3 v ds =10v tc= --25 c 75 c v gs =0v tc= --25 c 25 c 75 c 3 0 1.4 1.2 1.0 0.6 0.8 15 13 59 711 0.4 0.2 i d =7a tc=75 c 25 c --25 c i d =7a, v gs =10v it11726 10 100 3 2 2 5 7 1000 3 5 7 0.1 1.0 23 57 23 5 10 23 5 7 v dd =200v v gs =10v t d (off) t r t f t d (on) 0 7 100 10 1000 5 3 2 7 5 3 2 10000 7 5 3 2 50 5253545 15 10 30 40 20 it11727 f=1mhz ciss coss crss 8v 25 c
BFL4036 no. a1830-4/6 operation in this area is limited by r ds (on). 10 s 100 s 1ms 10ms i dp =50a (pw 10 s) dc operation 100ms i dc ( * 1)=14a i dpack ( * 2)=9.6a it17061 it11728 0 0 20 40 5 10 60 20 15 80 100 120 25 35 30 37 40 140 160 it11731 it11730 0 0 20 40 1.0 0.5 60 2.0 1.5 80 100 120 2.5 140 160 0 0 1 2 3 4 5 6 7 8 40 10 9 10 20 30 v ds =200v i d =14a total gate charge, qg -- nc gate to source voltage, v gs -- v drain to source voltage, v ds -- v drain current, i d -- a ambient temperature, ta -- c allowable power dissipation, p d -- w case temperature, tc -- c allowable power dissipation, p d -- w a s o v gs -- qg p d -- ta p d -- tc tc=25 c single pulse 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 e as -- ta avalanche energy derating factor -- % it10478 ambient temperature, ta -- c * 1. shows chip capability * 2. our ideal heat dissipation condition 2 3 5 7 2 3 5 7 2 3 5 7 2 2 3 5 7 0.1 1.0 10 100 0.01 23 57 23 57 23 57 1.0 10 100
BFL4036 no. a1830-5/6 outline drawing BFL4036-1e mass (g) unit 1.8 * for reference mm
BFL4036 ps no. a1830-6/6 note on usage : since the BFL4036 is a mosfet product, please avoid using this device in the vicinity of highly charged objects. on semiconductor and the on logo are registered trademarks of semiconductor components industries, llc (scillc). scillc owns th e rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. a listing of scillc?s product/patent covera ge may be accessed at www.onsemi.com/site/pdf/patent-marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc ass ume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation sp ecial, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different ap plications and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life , or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchas e or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiarie s, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the d esign or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws a nd is not for resale in any manner.
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